GERMANIUM NO FURTHER A MYSTERY

≤ 0.fifteen) is epitaxially developed on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which the composition is cycled as a result of oxidizing and annealing phases. As a result of preferential oxidation of Si around Ge [sixty eight], the first Si1–Nghiên cứu của FDA đưa ra kết luận rằng germani, khi s�